Технічний опис DMG2305UXQ-13 Diodes Zetex
Description: MOSFET P-CH 20V 4.2A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMG2305UXQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMG2305UXQ-13 | Виробник : Diodes Inc |
 P-CHANNEL ENHANCEMENT MODE MOSFET |
товару немає в наявності |
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DMG2305UXQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 10000 шт |
товару немає в наявності |
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DMG2305UXQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
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DMG2305UXQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS |
товару немає в наявності |
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DMG2305UXQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |