DMG302PU-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 25V 170MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 10000+ | 7.37 грн |
| 20000+ | 6.56 грн |
| 30000+ | 6.28 грн |
| 50000+ | 5.74 грн |
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Технічний опис DMG302PU-13 Diodes Incorporated
Description: MOSFET P-CH 25V 170MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V.
Інші пропозиції DMG302PU-13 за ціною від 6.99 грн до 40.30 грн
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DMG302PU-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 25V 170MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V |
на замовлення 652737 шт: термін постачання 21-31 дні (днів) |
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DMG302PU-13 | Виробник : Diodes Incorporated |
MOSFETs 25V P-Ch Enh Mode FET -8Vgss 0.33W |
на замовлення 12914 шт: термін постачання 21-30 дні (днів) |
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DMG302PU-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Pulsed drain current: -0.5A Drain current: -140mA Gate charge: 0.35nC Power dissipation: 0.45W On-state resistance: 13Ω Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: SOT23 |
товару немає в наявності |