DMG302PU-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 25V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
Power Dissipation (Max): 330mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V
на замовлення 489000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.97 грн |
| 6000+ | 7.35 грн |
| 9000+ | 6.62 грн |
| 30000+ | 6.12 грн |
| 75000+ | 5.75 грн |
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Технічний опис DMG302PU-7 Diodes Incorporated
Description: MOSFET P-CH 25V 170MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V, Power Dissipation (Max): 330mW, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V.
Інші пропозиції DMG302PU-7 за ціною від 6.68 грн до 31.86 грн
| Фото | Назва | Виробник | Інформація |
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DMG302PU-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 25V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 330mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V |
на замовлення 490111 шт: термін постачання 21-31 дні (днів) |
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DMG302PU-7 | Виробник : Diodes Incorporated |
MOSFET 25V P-Ch Enh FET 27.2pF 0.35nC |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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DMG302PU-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.45W Drain-source voltage: -25V Drain current: -140mA On-state resistance: 13Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.5A кількість в упаковці: 1 шт |
товар відсутній |
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DMG302PU-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.45W Drain-source voltage: -25V Drain current: -140mA On-state resistance: 13Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.5A |
товар відсутній |