Технічний опис DMG3402LQ-13 Diodes Inc
Description: MOSFET N-CH 30V 4A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMG3402LQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMG3402LQ-13 | Виробник : Diodes Zetex |
 Trans MOSFET N-CH 30V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R |
товару немає в наявності |
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DMG3402LQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 11.7nC Kind of channel: enhancement Gate-source voltage: ±12V кількість в упаковці: 10000 шт |
товару немає в наявності |
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DMG3402LQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
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DMG3402LQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
товару немає в наявності |
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DMG3402LQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 11.7nC Kind of channel: enhancement Gate-source voltage: ±12V |
товару немає в наявності |