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Технічний опис DMG3404L-13 Diodes Zetex
Description: MOSFET N-CH 30V 4.2A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V, Power Dissipation (Max): 780mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V.
Інші пропозиції DMG3404L-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMG3404L-13 | Diodes Incorporated |
 Description: MOSFET N-CH 30V 4.2A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
 |
DMG3404L-13 | Diodes Incorporated |
MOSFETs 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
 |
DMG3404L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23 Kind of package: 13 inch reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 Polarisation: unipolar Pulsed drain current: 30A Drain-source voltage: 30V Drain current: 4.9A Gate charge: 13.2nC On-state resistance: 35mΩ Power dissipation: 1.33W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| DMG3404L-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMG3404L-13 |
|
Виробник: Diodes Incorporated
MOSFETs 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC
MOSFETs 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMG3404L-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Pulsed drain current: 30A
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 13.2nC
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Pulsed drain current: 30A
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 13.2nC
On-state resistance: 35mΩ
Power dissipation: 1.33W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.