DMG3415UFY4-7 Diodes Incorporated

Description: MOSFET P-CH 16V 2.5A DFN2015H4-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN2015H4-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 16 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 281.9 pF @ 10 V.