DMG3418L-13 Diodes Incorporated

Description: MOSFET N-CH 30V 4A SOT23, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).