Технічний опис DMG3N60SCT Diodes Incorporated
Description: MOSFET N-CH 600V 3.3A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB (Type TH), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції DMG3N60SCT
| Фото | Назва | Виробник | Інформація |
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DMG3N60SCT | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 600V 3.3A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB (Type TH) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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DMG3N60SCT | Виробник : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 3.7A Power dissipation: 42W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 12.6C Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |