Технічний опис DMG3N60SCT Diodes Incorporated
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 2A, Pulsed drain current: 3.7A, Power dissipation: 42W, Case: TO220AB, Gate-source voltage: ±30V, On-state resistance: 2.7Ω, Mounting: THT, Gate charge: 12.6C, Kind of package: tube, Kind of channel: enhancement, кількість в упаковці: 1 шт.
Інші пропозиції DMG3N60SCT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMG3N60SCT | Виробник : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 3.7A Power dissipation: 42W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 12.6C Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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DMG3N60SCT | Виробник : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 3.7A Power dissipation: 42W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 12.6C Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |