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Технічний опис DMG3N60SCT Diodes Incorporated
Description: MOSFET N-CH 600V 3.3A TO220AB, Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-220AB (Type TH), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V.
Інші пропозиції DMG3N60SCT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMG3N60SCT | Diodes Incorporated |
Description: MOSFET N-CH 600V 3.3A TO220AB Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-220AB (Type TH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V |
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DMG3N60SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 3.7A Power dissipation: 42W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 12.6C Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG3N60SCT |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 600V 3.3A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220AB (Type TH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V
Description: MOSFET N-CH 600V 3.3A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220AB (Type TH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V
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В кошику
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| DMG3N60SCT |
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 3.7A
Power dissipation: 42W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 12.6C
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 3.7A
Power dissipation: 42W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 12.6C
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.