| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 17.02 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
2500 шт
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Технічний опис DMG4407SSS-13 Diodes Zetex
Description: MOSFET P-CH 30V 9.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V, Power Dissipation (Max): 1.45W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V.
Інші пропозиції DMG4407SSS-13
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMG4407SSS-13 | Diodes Incorporated |
 Description: MOSFET P-CH 30V 9.9A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
|
DMG4407SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 9.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMG4407SSS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMG4407SSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -80A Power dissipation: 1.82W Case: SO8 Gate-source voltage: ±25V On-state resistance: 17mΩ Mounting: SMD Gate charge: 41nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG4407SSS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Description: MOSFET P-CH 30V 9.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMG4407SSS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Description: MOSFET P-CH 30V 9.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMG4407SSS-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
товару немає в наявності
В кошику
од. на суму грн.
| DMG4407SSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 1.82W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 1.82W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.