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Технічний опис DMG4407SSS-13 Diodes Zetex
Description: MOSFET P-CH 30V 9.9A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.45W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DMG4407SSS-13 за ціною від 15.76 грн до 61.99 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMG4407SSS-13 | Diodes Incorporated |
 Description: MOSFET P-CH 30V 9.9A 8SOInput Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.45W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 1985 шт: термін постачання 21-31 дні (днів) |
|
| DMG4407SSS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.99 грн |
| 10+ | 37.24 грн |
| 100+ | 24.21 грн |
| 500+ | 17.45 грн |
| 1000+ | 15.76 грн |