DMG4468LFG-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7.62A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN3030-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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Технічний опис DMG4468LFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 7.62A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: U-DFN3030-8, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 990mW (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMG4468LFG-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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DMG4468LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMG4468LFG-7 | Diodes Incorporated |
MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG4468LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW Kind of package: 7 inch reel; tape Case: U-DFN3030-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 18.85nC On-state resistance: 23.5mΩ Power dissipation: 0.99W Drain current: 4.83A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 45.9A |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG4468LFG-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7.62A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Power Dissipation (Max): 990mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Description: MOSFET N-CH 30V 7.62A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Power Dissipation (Max): 990mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| DMG4468LFG-7 |
|
Виробник: Diodes Incorporated
MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD
MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD
товару немає в наявності
В кошику
од. на суму грн.
| DMG4468LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW
Kind of package: 7 inch reel; tape
Case: U-DFN3030-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.85nC
On-state resistance: 23.5mΩ
Power dissipation: 0.99W
Drain current: 4.83A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 45.9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW
Kind of package: 7 inch reel; tape
Case: U-DFN3030-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 18.85nC
On-state resistance: 23.5mΩ
Power dissipation: 0.99W
Drain current: 4.83A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 45.9A
товару немає в наявності
В кошику
од. на суму грн.