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DMG4468LFG-7 Diodes Inc

Name: DMG4468LFG-7
Brand: Diodes Incorporated
SKU: 145332-4
Price: 76230 UAH
Availability: BackOrder

Виробник: Diodes Inc
Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R

товару немає в наявності

В кошику од. на суму грн.

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Технічний опис DMG4468LFG-7 Diodes Inc

Description: MOSFET N-CH 30V 7.62A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V, Power Dissipation (Max): 990mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN3030-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V.

Інші пропозиції DMG4468LFG-7

Назва	Виробник	Інформація	Доступність	Ціна
DMG4468LFG-7	Виробник : DIODES INCORPORATED	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW Mounting: SMD Case: U-DFN3030-8 Drain-source voltage: 30V Drain current: 4.83A On-state resistance: 23.5mΩ Type of transistor: N-MOSFET Power dissipation: 0.99W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 18.85nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 45.9A кількість в упаковці: 3000 шт	товару немає в наявності	В кошику од. на суму грн.
DMG4468LFG-7	Виробник : Diodes Zetex	Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R	товару немає в наявності	В кошику од. на суму грн.
DMG4468LFG-7	Виробник : Diodes Incorporated	Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V	товару немає в наявності	В кошику од. на суму грн.
DMG4468LFG-7	Виробник : Diodes Incorporated	Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V	товару немає в наявності	В кошику од. на суму грн.
DMG4468LFG-7	Виробник : Diodes Incorporated	MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD	товару немає в наявності	В кошику од. на суму грн.
DMG4468LFG-7	Виробник : DIODES INCORPORATED	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW Mounting: SMD Case: U-DFN3030-8 Drain-source voltage: 30V Drain current: 4.83A On-state resistance: 23.5mΩ Type of transistor: N-MOSFET Power dissipation: 0.99W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 18.85nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 45.9A	товару немає в наявності	В кошику од. на суму грн.