DMG4468LFG-7 Diodes Incorporated
на замовлення 2975 шт:
термін постачання 454-463 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.21 грн |
| 10+ | 63.88 грн |
| 100+ | 42.59 грн |
| 500+ | 33.71 грн |
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Технічний опис DMG4468LFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 7.62A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V, Power Dissipation (Max): 990mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN3030-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V.
Інші пропозиції DMG4468LFG-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMG4468LFG-7 | Виробник : Diodes Inc |
 Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R |
товар відсутній |
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| DMG4468LFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.83A On-state resistance: 23.5mΩ Type of transistor: N-MOSFET Power dissipation: 0.99W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45.9A Mounting: SMD Case: U-DFN3030-8 кількість в упаковці: 3000 шт |
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DMG4468LFG-7 | Виробник : Diodes Zetex |
Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R |
товар відсутній |
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DMG4468LFG-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V |
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DMG4468LFG-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V |
товар відсутній |
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| DMG4468LFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.83A On-state resistance: 23.5mΩ Type of transistor: N-MOSFET Power dissipation: 0.99W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45.9A Mounting: SMD Case: U-DFN3030-8 |
товар відсутній |