DMG4468LK3-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 6+ | 59.24 грн |
| 10+ | 37.44 грн |
| 100+ | 21.66 грн |
| 500+ | 16.81 грн |
| 1000+ | 15.26 грн |
| 2500+ | 12.59 грн |
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Технічний опис DMG4468LK3-13 Diodes Incorporated
Description: MOSFET N-CH 30V 9.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V, Power Dissipation (Max): 1.68W (Ta), Vgs(th) (Max) @ Id: 1.95V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V.
Інші пропозиції DMG4468LK3-13 за ціною від 17.27 грн до 68.04 грн
| Фото | Назва | Виробник | Інформація |
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DMG4468LK3-13 | Diodes Incorporated |
 Description: MOSFET N-CH 30V 9.7A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
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| DMG4468LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 9.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V
Power Dissipation (Max): 1.68W (Ta)
Vgs(th) (Max) @ Id: 1.95V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V
Description: MOSFET N-CH 30V 9.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V
Power Dissipation (Max): 1.68W (Ta)
Vgs(th) (Max) @ Id: 1.95V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 40.76 грн |
| 100+ | 26.51 грн |
| 500+ | 19.12 грн |
| 1000+ | 17.27 грн |