DMG4496SSSQ-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 6+ | 59.24 грн |
| 10+ | 35.67 грн |
| 100+ | 20.46 грн |
| 500+ | 16.10 грн |
| 1000+ | 13.71 грн |
| 2500+ | 10.34 грн |
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Технічний опис DMG4496SSSQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.42W (Ta), Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DMG4496SSSQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMG4496SSSQ-13 | Diodes Incorporated |
 Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.42W (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG4496SSSQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.42W (Ta)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.42W (Ta)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.