DMG4800LK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 1.71W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 2500+ | 15.14 грн |
| 5000+ | 13.80 грн |
| 7500+ | 13.44 грн |
| 12500+ | 12.37 грн |
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Технічний опис DMG4800LK3-13 Diodes Incorporated
Description: MOSFET N-CH 30V 10A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V, Power Dissipation (Max): 1.71W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V.
Інші пропозиції DMG4800LK3-13 за ціною від 11.39 грн до 61.71 грн
| Фото | Назва | Виробник | Інформація |
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DMG4800LK3-13 | Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A |
на замовлення 8176 шт: термін постачання 21-30 дні (днів) |
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DMG4800LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 10A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V |
на замовлення 35006 шт: термін постачання 21-31 дні (днів) |
|
| DMG4800LK3-13 |
|
Виробник: Diodes Incorporated
MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A
MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A
на замовлення 8176 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.00 грн |
| 10+ | 36.56 грн |
| 100+ | 21.17 грн |
| 500+ | 16.17 грн |
| 1000+ | 14.63 грн |
| 2500+ | 12.45 грн |
| 5000+ | 11.39 грн |
| DMG4800LK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 1.71W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
Description: MOSFET N-CH 30V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 1.71W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
на замовлення 35006 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.71 грн |
| 10+ | 37.41 грн |
| 100+ | 24.62 грн |
| 500+ | 17.77 грн |
| 1000+ | 16.02 грн |