DMG4800LSDQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 107500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 15.21 грн |
5000+ | 13.88 грн |
12500+ | 12.85 грн |
25000+ | 11.94 грн |
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Технічний опис DMG4800LSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.17W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMG4800LSDQ-13 за ціною від 13.82 грн до 44.16 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMG4800LSDQ-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 30V 7.5A Automotive AEC-Q101 8-Pin SO T/R |
на замовлення 107500 шт: термін постачання 21-31 дні (днів) |
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DMG4800LSDQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 7.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 109596 шт: термін постачання 21-31 дні (днів) |
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DMG4800LSDQ-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K |
на замовлення 6184 шт: термін постачання 21-30 дні (днів) |
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DMG4800LSDQ-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 30V 7.5A Automotive 8-Pin SO T/R |
товар відсутній |
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DMG4800LSDQ-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 30V 7.5A Automotive AEC-Q101 8-Pin SO T/R |
товар відсутній |
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DMG4800LSDQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.4A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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DMG4800LSDQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.4A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |