DMG4812SSS-13 Diodes Incorporated


DMG4812SSS-476129.pdf Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS
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Технічний опис DMG4812SSS-13 Diodes Incorporated

Description: MOSFET N-CH 30V 8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 1.54W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V.

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DMG4812SSS-13 DMG4812SSS-13 Виробник : Diodes Incorporated DMG4812SSS.pdf Description: MOSFET N-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
товар відсутній
DMG4812SSS-13 DMG4812SSS-13 Виробник : Diodes Incorporated DMG4812SSS.pdf Description: MOSFET N-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
товар відсутній