DMG4812SSS-13 Diodes Incorporated

Description: MOSFET N-CH 30V 8A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 1.54W (Ta), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).