DMG4822SSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 18.78 грн |
| 5000+ | 16.65 грн |
| 7500+ | 15.92 грн |
| 12500+ | 14.17 грн |
| 17500+ | 13.71 грн |
| 25000+ | 13.27 грн |
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Технічний опис DMG4822SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.42W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції DMG4822SSD-13 за ціною від 19.15 грн до 74.39 грн
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DMG4822SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 52614 шт: термін постачання 21-31 дні (днів) |
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DMG4822SSD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K |
на замовлення 5157 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMG4822SSD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 52614 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.39 грн |
| 10+ | 44.70 грн |
| 100+ | 29.21 грн |
| 500+ | 21.17 грн |
| 1000+ | 19.15 грн |
| DMG4822SSD-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K
MOSFETs MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K
на замовлення 5157 шт:
термін постачання 21-30 дні (днів)