DMG4822SSDQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 24.16 грн |
| 5000+ | 21.51 грн |
| 7500+ | 20.62 грн |
| 12500+ | 19.03 грн |
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Технічний опис DMG4822SSDQ-13 Diodes Incorporated
Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.016 ohm, tariffCode: 85411000, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 10A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 10A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 1.42W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.42W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції DMG4822SSDQ-13 за ціною від 23.87 грн до 61.99 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMG4822SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.42W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount |
на замовлення 589853 шт: термін постачання 21-31 дні (днів) |
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DMG4822SSDQ-13 | DIODES INC. |
Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.016 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
на замовлення 2443 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMG4822SSDQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
на замовлення 2327 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMG4822SSDQ-13 | DIODES INC. |
Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.016 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
на замовлення 2443 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| DMG4822SSDQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
на замовлення 589853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.99 грн |
| 10+ | 51.71 грн |
| 100+ | 35.77 грн |
| 500+ | 28.05 грн |
| 1000+ | 23.87 грн |
| DMG4822SSDQ-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.016 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 10A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.42W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.42W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.016 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 10A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.42W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.42W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
на замовлення 2443 шт:
термін постачання 21-31 дні (днів)
| DMG4822SSDQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V
MOSFETs MOSFET BVDSS: 31V-40V
на замовлення 2327 шт:
термін постачання 21-30 дні (днів)
| DMG4822SSDQ-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.016 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 10A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.42W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.42W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.016 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 10A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.42W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.42W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
на замовлення 2443 шт:
термін постачання 21-31 дні (днів)