DMG4N60SK3-13 Diodes Incorporated
на замовлення 2477 шт:
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Технічний опис DMG4N60SK3-13 Diodes Incorporated
Description: MOSFET N-CH 600V 3.7A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V, Power Dissipation (Max): 48W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V.
Інші пропозиції DMG4N60SK3-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMG4N60SK3-13 | Виробник : Diodes Inc |
 600V N-CHANNEL ENHANCEMENT MODE MOSFET |
товар відсутній |
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DMG4N60SK3-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 600V 3.7A TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Power Dissipation (Max): 48W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V |
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DMG4N60SK3-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 600V 3.7A TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Power Dissipation (Max): 48W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V |
товар відсутній |