DMG4N65CT Diodes Incorporated

Description: MOSFET N CH 650V 4A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.19W (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.