DMG4N65CTI Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 650V 4A ITO220AB
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 8.35W (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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Технічний опис DMG4N65CTI Diodes Incorporated
Description: MOSFET N-CH 650V 4A ITO220AB, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: ITO-220AB, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 8.35W (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Інші пропозиції DMG4N65CTI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMG4N65CTI | Diodes Incorporated |
MOSFET N-CH MOSFET 650V 4A |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG4N65CTI |
|
Виробник: Diodes Incorporated
MOSFET N-CH MOSFET 650V 4A
MOSFET N-CH MOSFET 650V 4A
товару немає в наявності
В кошику
од. на суму грн.