DMG6602SVT-7-52 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 840mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
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Технічний опис DMG6602SVT-7-52 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R, Part Status: Active, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 2.3V @ 250µA, FET Feature: Standard, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 840mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Bulk.