DMG6898LSDQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 22.98 грн |
5000+ | 20.96 грн |
12500+ | 19.41 грн |
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Технічний опис DMG6898LSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.28W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO.
Інші пропозиції DMG6898LSDQ-13 за ціною від 19.53 грн до 65.95 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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DMG6898LSDQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 9.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.28W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.5A Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO |
на замовлення 24984 шт: термін постачання 21-31 дні (днів) |
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DMG6898LSDQ-13 | Виробник : Diodes Incorporated | MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss |
на замовлення 17238 шт: термін постачання 21-30 дні (днів) |
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DMG6898LSDQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 30A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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DMG6898LSDQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 30A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |