Інші пропозиції DMG6968UDM-7 за ціною від 13.78 грн до 58.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMG6968UDM-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 6.5A SOT26Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A Drain to Source Voltage (Vdss): 20V Power - Max: 850mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMG6968UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Power dissipation: 0.85W Case: SOT26 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Semiconductor structure: common drain |
на замовлення 111 шт: термін постачання 14-30 дні (днів) |
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DMG6968UDM-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 6.5A SOT26 Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A Drain to Source Voltage (Vdss): 20V Power - Max: 850mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 5441 шт: термін постачання 21-31 дні (днів) |
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DMG6968UDM-7 | Diodes Incorporated |
MOSFETs DUAL N-CHANNEL |
на замовлення 1021 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMG6968UDM-7 | DIODES INC. |
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 850mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 850mW Betriebstemperatur, max.: 150°C |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||
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DMG6968UDM-7 | DIODES INC. |
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 850mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 850mW Betriebstemperatur, max.: 150°C |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 27 шт В кошику од. на суму грн. |
| DMG6968UDM-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.78 грн |
| DMG6968UDM-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Semiconductor structure: common drain
на замовлення 111 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.17 грн |
| 11+ | 39.54 грн |
| 13+ | 34.45 грн |
| 100+ | 19.60 грн |
| DMG6968UDM-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 6.5A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 850mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 5441 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.68 грн |
| 10+ | 35.12 грн |
| 25+ | 29.32 грн |
| 50+ | 24.11 грн |
| 100+ | 21.22 грн |
| DMG6968UDM-7 |
|
Виробник: Diodes Incorporated
MOSFETs DUAL N-CHANNEL
MOSFETs DUAL N-CHANNEL
на замовлення 1021 шт:
термін постачання 21-30 дні (днів)
| DMG6968UDM-7 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 850mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 850mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 850mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 850mW
Betriebstemperatur, max.: 150°C
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| DMG6968UDM-7 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 850mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 850mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMG6968UDM-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.5 A, 6.5 A, 0.024 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 850mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 850mW
Betriebstemperatur, max.: 150°C
на замовлення 27 шт:
термін постачання 21-31 дні (днів)