DMG7401SFG-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 3000+ | 13.41 грн |
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Технічний опис DMG7401SFG-13 Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V, Power Dissipation (Max): 940mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V.
Інші пропозиції DMG7401SFG-13 за ціною від 14.50 грн до 58.04 грн
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DMG7401SFG-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V |
на замовлення 49415 шт: термін постачання 21-31 дні (днів) |
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DMG7401SFG-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K |
товару немає в наявності |
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| DMG7401SFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W Polarisation: unipolar Pulsed drain current: -80A Drain current: -10.8A Drain-source voltage: -30V Gate-source voltage: ±25V Gate charge: 58nC On-state resistance: 25mΩ Kind of package: 13 inch reel; tape Power dissipation: 1.3W Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 Mounting: SMD |
товару немає в наявності |