DMG8822UTS-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 6+ | 59.98 грн |
| 10+ | 36.56 грн |
| 100+ | 20.54 грн |
| 500+ | 15.68 грн |
| 1000+ | 14.07 грн |
| 2500+ | 12.10 грн |
| 5000+ | 10.76 грн |
Відгуки про товар
Написати відгук
Технічний опис DMG8822UTS-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 3.9A, Pulsed drain current: 31A, Power dissipation: 0.87W, Case: TSSOP8, Gate-source voltage: ±8V, On-state resistance: 37mΩ, Mounting: SMD, Gate charge: 9.6nC, Kind of package: 13 inch reel; tape, Kind of channel: enhancement.
Інші пропозиції DMG8822UTS-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMG8822UTS-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 4.9A 8TSSOP |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG8822UTS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.9A Pulsed drain current: 31A Power dissipation: 0.87W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG8822UTS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.9A 8TSSOP
Description: MOSFET 2N-CH 20V 4.9A 8TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| DMG8822UTS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.