DMG9926USD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
| Кількість | Ціна |
|---|---|
| 2500+ | 11.47 грн |
| 5000+ | 10.10 грн |
| 7500+ | 9.61 грн |
| 12500+ | 8.51 грн |
| 17500+ | 8.21 грн |
| 25000+ | 7.92 грн |
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Технічний опис DMG9926USD-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції DMG9926USD-13 за ціною від 12.17 грн до 52.18 грн
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DMG9926USD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 99430 шт: термін постачання 21-31 дні (днів) |
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DMG9926USD-13 | Diodes Incorporated |
MOSFETs MOSFET,N-CHANNEL |
на замовлення 953 шт: термін постачання 21-30 дні (днів) |
|
| DMG9926USD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 20V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 99430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.05 грн |
| 11+ | 29.48 грн |
| 100+ | 18.95 грн |
| 500+ | 13.54 грн |
| 1000+ | 12.17 грн |
| DMG9926USD-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET,N-CHANNEL
MOSFETs MOSFET,N-CHANNEL
на замовлення 953 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 52.18 грн |
| 11+ | 31.86 грн |
| 100+ | 17.86 грн |