| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 11.14 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
2500 шт
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Технічний опис DMG9933USD-13 Diodes Zetex
Description: MOSFET 2P-CH 20V 4.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.15W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.6A, Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V, Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції DMG9933USD-13 за ціною від 11.11 грн до 55.65 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMG9933USD-13 | Diodes Incorporated |
 Description: MOSFET 2P-CH 20V 4.6A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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DMG9933USD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -20A Power dissipation: 1.15W Case: SO8 Gate-source voltage: ±12V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 839 шт: термін постачання 14-30 дні (днів) |
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DMG9933USD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 17700 шт: термін постачання 21-31 дні (днів) |
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DMG9933USD-13 | Diodes Incorporated |
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS |
на замовлення 259 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMG9933USD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 20V 4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 13.29 грн |
| 7500+ | 11.11 грн |
| DMG9933USD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -20A
Power dissipation: 1.15W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -20A
Power dissipation: 1.15W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 839 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.96 грн |
| 14+ | 31.70 грн |
| 100+ | 18.62 грн |
| 500+ | 13.33 грн |
| DMG9933USD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 20V 4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 17700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.65 грн |
| 10+ | 33.44 грн |
| 25+ | 27.81 грн |
| 50+ | 22.87 грн |
| 100+ | 20.11 грн |
| DMG9933USD-13 |
|
Виробник: Diodes Incorporated
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS
на замовлення 259 шт:
термін постачання 21-30 дні (днів)