DMG9933USD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 10.77 грн |
| 5000+ | 9.46 грн |
| 7500+ | 9.00 грн |
| 12500+ | 7.96 грн |
| 17500+ | 7.67 грн |
| 25000+ | 7.39 грн |
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Технічний опис DMG9933USD-13 Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1.1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 4.6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.15W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DMG9933USD-13 за ціною від 8.23 грн до 46.68 грн
| Фото | Назва | Виробник | Інформація |
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DMG9933USD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -20A Drain current: -3A Gate charge: 6.5nC On-state resistance: 0.11Ω Power dissipation: 1.15W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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DMG9933USD-13 | Diodes Incorporated |
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS |
на замовлення 7827 шт: термін постачання 21-30 дні (днів) |
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DMG9933USD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.6A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Current - Continuous Drain (Id) @ 25°C: 4.6A Drain to Source Voltage (Vdss): 20V Power - Max: 1.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 51997 шт: термін постачання 21-31 дні (днів) |
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| DMG9933USD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.76 грн |
| 15+ | 29.54 грн |
| 100+ | 17.52 грн |
| 500+ | 12.44 грн |
| 1000+ | 11.00 грн |
| DMG9933USD-13 |
|
Виробник: Diodes Incorporated
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS
на замовлення 7827 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.86 грн |
| 12+ | 29.03 грн |
| 100+ | 16.46 грн |
| 500+ | 12.52 грн |
| 1000+ | 11.11 грн |
| 2500+ | 9.42 грн |
| 5000+ | 8.23 грн |
| DMG9933USD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 51997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.68 грн |
| 11+ | 27.88 грн |
| 100+ | 17.90 грн |
| 500+ | 12.75 грн |
| 1000+ | 11.45 грн |