Технічний опис DMHC3025LSDQ-13 Diodes Zetex
Description: DIODES INC. - DMHC3025LSDQ-13 - Dual-MOSFET, Komplementär zweifach n-Kanal und zweifach p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.019 ohm, tariffCode: 85411000, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.019ohm, Verlustleistung, p-Kanal: 1.5W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.019ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementär zweifach n-Kanal und zweifach p-Kanal, Verlustleistung, n-Kanal: 1.5W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (15-Jan-2018).
Інші пропозиції DMHC3025LSDQ-13 за ціною від 28.13 грн до 95.10 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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DMHC3025LSDQ-13 | Diodes Incorporated |
 Description: MOSFET 2N/2P-CH 30V 6A/4.2A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 813 шт: термін постачання 21-31 дні (днів) |
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DMHC3025LSDQ-13 | Diodes Incorporated |
MOSFETs 30V Comp Enh FET H-Bridge 2xN 2xP |
на замовлення 2531 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMHC3025LSDQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 30V 6A/4.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N/2P-CH 30V 6A/4.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 813 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.10 грн |
| 10+ | 57.78 грн |
| 100+ | 38.32 грн |
| 500+ | 28.13 грн |
| DMHC3025LSDQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs 30V Comp Enh FET H-Bridge 2xN 2xP
MOSFETs 30V Comp Enh FET H-Bridge 2xN 2xP
на замовлення 2531 шт:
термін постачання 21-30 дні (днів)