DMHC6070LSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис DMHC6070LSD-13 Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.6W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N and 2 P-Channel (Full Bridge), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DMHC6070LSD-13 за ціною від 34.03 грн до 122.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMHC6070LSD-13 | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A Drain to Source Voltage (Vdss): 60V Power - Max: 1.6W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N and 2 P-Channel (Full Bridge) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 6573 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
DMHC6070LSD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
на замовлення 11437 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMHC6070LSD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 6573 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.44 грн |
| 10+ | 75.07 грн |
| 100+ | 50.30 грн |
| 500+ | 37.24 грн |
| 1000+ | 34.03 грн |
| DMHC6070LSD-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
на замовлення 11437 шт:
термін постачання 21-30 дні (днів)