DMHT6016LFJ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 4N-CH 60V 14.8A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Drain to Source Voltage (Vdss): 60V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 48.80 грн |
| 6000+ | 44.05 грн |
| 9000+ | 42.92 грн |
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Технічний опис DMHT6016LFJ-13 Diodes Incorporated
Description: MOSFET 4N-CH 60V 14.8A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V, Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN5045-12, Part Status: Active, Drain to Source Voltage (Vdss): 60V.
Інші пропозиції DMHT6016LFJ-13 за ціною від 49.58 грн до 169.70 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMHT6016LFJ-13 | Diodes Incorporated |
Description: MOSFET 4N-CH 60V 14.8A 12VDFN Packaging: Cut Tape (CT) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active Drain to Source Voltage (Vdss): 60V |
на замовлення 12983 шт: термін постачання 21-31 дні (днів) |
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DMHT6016LFJ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
на замовлення 11940 шт: термін постачання 301-310 дні (днів) |
В кошику од. на суму грн. |
| DMHT6016LFJ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 4N-CH 60V 14.8A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Drain to Source Voltage (Vdss): 60V
Description: MOSFET 4N-CH 60V 14.8A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Drain to Source Voltage (Vdss): 60V
на замовлення 12983 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 169.70 грн |
| 10+ | 105.22 грн |
| 100+ | 71.75 грн |
| 500+ | 53.90 грн |
| 1000+ | 49.58 грн |
| DMHT6016LFJ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
на замовлення 11940 шт:
термін постачання 301-310 дні (днів)