DMN1004UFDF-13 Diodes Incorporated

Description: MOSFET N-CH 12V 15A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: U-DFN2020-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2.1W (Ta), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 15A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).