| Кількість | Ціна |
|---|---|
| 6+ | 61.37 грн |
| 10+ | 37.53 грн |
| 100+ | 21.17 грн |
| 500+ | 16.17 грн |
| 1000+ | 14.63 грн |
| 3000+ | 12.17 грн |
| 6000+ | 11.46 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN1017UCP3-7 Diodes Incorporated
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V, Power Dissipation (Max): 1.47W, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X3-DSN1010-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V, Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V.
Інші пропозиції DMN1017UCP3-7 за ціною від 11.19 грн до 63.29 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN1017UCP3-7 | Diodes Incorporated |
 Description: MOSFET N-CH 12V 7.5A X3DSN1010-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V Power Dissipation (Max): 1.47W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X3-DSN1010-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V |
на замовлення 648000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
| DMN1017UCP3-7 | Diodes Incorporated |
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V Power Dissipation (Max): 1.47W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X3-DSN1010-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V |
на замовлення 650477 шт: термін постачання 21-31 дні (днів) |
|
| DMN1017UCP3-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X3-DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X3-DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V
на замовлення 648000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 14.94 грн |
| 6000+ | 13.45 грн |
| 9000+ | 13.09 грн |
| 15000+ | 11.42 грн |
| 21000+ | 11.19 грн |
| DMN1017UCP3-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X3-DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V
Description: MOSFET N-CH 12V 7.5A X3DSN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 3.3V
Power Dissipation (Max): 1.47W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X3-DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 6 V
на замовлення 650477 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 63.29 грн |
| 10+ | 38.02 грн |
| 100+ | 24.61 грн |
| 500+ | 17.69 грн |
| 1000+ | 15.95 грн |