DMN1019UFDE-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N CH 12V 11A U-DFN2020-6E
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.47 грн |
| 10+ | 31.86 грн |
| 100+ | 20.52 грн |
| 500+ | 14.67 грн |
| 1000+ | 13.19 грн |
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Технічний опис DMN1019UFDE-7 Diodes Incorporated
Description: MOSFET N CH 12V 11A U-DFN2020-6E, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V, Power Dissipation (Max): 690mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 10 V.
Інші пропозиції DMN1019UFDE-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMN1019UFDE-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K |
на замовлення 2951 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
|
|
DMN1019UFDE-7 | Diodes Incorporated |
Description: MOSFET N CH 12V 11A U-DFN2020-6E Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 10 V |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1300 шт В кошику од. на суму грн. |
| DMN1019UFDE-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
на замовлення 2951 шт:
термін постачання 21-30 дні (днів)
| DMN1019UFDE-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N CH 12V 11A U-DFN2020-6E
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 10 V
Description: MOSFET N CH 12V 11A U-DFN2020-6E
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 10 V
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)