DMN1019USNQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SC59 T&R 3K, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V, Power Dissipation (Max): 680mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SC-59-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V, Qualification: AEC-Q101.