DMN1019UVT-13 Diodes Incorporated

Description: MOSFET N-CH 12V 10.7A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V, Power Dissipation (Max): 1.73W (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V.