DMN1053UCP4-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: X3-DSN0808-4
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power Dissipation (Max): 1.34W
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.86 грн |
| 6000+ | 9.55 грн |
| 9000+ | 8.78 грн |
| 15000+ | 8.11 грн |
| 21000+ | 7.82 грн |
| 30000+ | 7.79 грн |
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Технічний опис DMN1053UCP4-7 Diodes Incorporated
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4, Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: X3-DSN0808-4, Vgs(th) (Max) @ Id: 700mV @ 250µA, Power Dissipation (Max): 1.34W, Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-XFBGA, CSPBGA, Packaging: Tape & Reel (TR).
Інші пропозиції DMN1053UCP4-7 за ціною від 11.55 грн до 41.85 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN1053UCP4-7 | Diodes Incorporated |
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: X3-DSN0808-4 Vgs(th) (Max) @ Id: 700mV @ 250µA Power Dissipation (Max): 1.34W Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) |
на замовлення 113990 шт: термін постачання 21-31 дні (днів) |
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| DMN1053UCP4-7 | Diodes Incorporated |
MOSFET MOSFETBVDSS: 8V-24V |
на замовлення 35980 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN1053UCP4-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: X3-DSN0808-4
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power Dissipation (Max): 1.34W
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: X3-DSN0808-4
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power Dissipation (Max): 1.34W
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
на замовлення 113990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.85 грн |
| 12+ | 26.71 грн |
| 100+ | 18.06 грн |
| 500+ | 12.86 грн |
| 1000+ | 11.55 грн |
| DMN1053UCP4-7 |
|
Виробник: Diodes Incorporated
MOSFET MOSFETBVDSS: 8V-24V
MOSFET MOSFETBVDSS: 8V-24V
на замовлення 35980 шт:
термін постачання 21-30 дні (днів)