DMN10H100SK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 18A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Відгуки про товар
Написати відгук
Технічний опис DMN10H100SK3-13 Diodes Incorporated
Description: MOSFET N-CH 100V 18A TO252, Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 37W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції DMN10H100SK3-13 за ціною від 17.02 грн до 64.88 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN10H100SK3-13 | Diodes Incorporated |
MOSFETs 100V N-Ch Enh FET 100mOhm 3V |
на замовлення 2658 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
DMN10H100SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 18A TO252 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
на замовлення 7450 шт: термін постачання 21-31 дні (днів) |
|
| DMN10H100SK3-13 |
|
Виробник: Diodes Incorporated
MOSFETs 100V N-Ch Enh FET 100mOhm 3V
MOSFETs 100V N-Ch Enh FET 100mOhm 3V
на замовлення 2658 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.71 грн |
| 10+ | 47.80 грн |
| 100+ | 28.76 грн |
| 500+ | 24.05 грн |
| 1000+ | 20.46 грн |
| 2500+ | 17.02 грн |
| DMN10H100SK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 18A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: MOSFET N-CH 100V 18A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
на замовлення 7450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 64.88 грн |
| 10+ | 41.98 грн |
| 100+ | 28.97 грн |
| 500+ | 21.64 грн |
| 1000+ | 19.82 грн |