DMN10H120SE-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 3.6A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 15.21 грн |
| 5000+ | 13.90 грн |
| 12500+ | 12.91 грн |
| 25000+ | 11.84 грн |
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Технічний опис DMN10H120SE-13 Diodes Incorporated
Description: MOSFET N-CH 100V 3.6A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції DMN10H120SE-13 за ціною від 15.38 грн до 45.10 грн
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DMN10H120SE-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 3.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V |
на замовлення 905640 шт: термін постачання 21-31 дні (днів) |
|
| DMN10H120SE-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
Description: MOSFET N-CH 100V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
на замовлення 905640 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.10 грн |
| 10+ | 37.10 грн |
| 100+ | 25.82 грн |
| 500+ | 18.92 грн |
| 1000+ | 15.38 грн |