DMN10H170SFG-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2000+ | 14.50 грн |
| 6000+ | 13.06 грн |
| 10000+ | 12.16 грн |
| 50000+ | 10.57 грн |
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Технічний опис DMN10H170SFG-7 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 940mW (Ta), Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN10H170SFG-7 за ціною від 12.31 грн до 44.22 грн
| Фото | Назва | Виробник | Інформація |
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DMN10H170SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V |
на замовлення 51045 шт: термін постачання 21-31 дні (днів) |
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DMN10H170SFG-7 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 100Vdss 20Vgss |
на замовлення 1486 шт: термін постачання 21-30 дні (днів) |
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| DMN10H170SFG-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
на замовлення 51045 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 41.14 грн |
| 10+ | 33.75 грн |
| 25+ | 31.51 грн |
| 100+ | 23.67 грн |
| 250+ | 21.98 грн |
| 500+ | 18.60 грн |
| 1000+ | 14.14 грн |
| DMN10H170SFG-7 |
|
Виробник: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 100Vdss 20Vgss
MOSFETs N-Ch Enh Mode FET 100Vdss 20Vgss
на замовлення 1486 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.22 грн |
| 10+ | 34.94 грн |
| 100+ | 22.57 грн |
| 500+ | 19.13 грн |
| 1000+ | 14.77 грн |
| 2000+ | 12.31 грн |