DMN10H170SVT-13 Diodes Incorporated

Description: MOSFET N-CH 100V 2.6A TSOT26, Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).