DMN10H170SVT-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 11.37 грн |
| 6000+ | 10.57 грн |
| 9000+ | 10.19 грн |
| 15000+ | 9.53 грн |
| 21000+ | 9.20 грн |
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Технічний опис DMN10H170SVT-7 Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26, Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції DMN10H170SVT-7 за ціною від 9.07 грн до 37.41 грн
| Фото | Назва | Виробник | Інформація |
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DMN10H170SVT-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.6A TSOT26 Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 877630 шт: термін постачання 21-31 дні (днів) |
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DMN10H170SVT-7 | Diodes Incorporated |
MOSFETs 100V N-Ch Enh FET 20Vgss 2.6A 1.2W |
на замовлення 42345 шт: термін постачання 21-30 дні (днів) |
|
| DMN10H170SVT-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 877630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 35.60 грн |
| 11+ | 29.26 грн |
| 100+ | 20.44 грн |
| 500+ | 14.91 грн |
| 1000+ | 13.42 грн |
| DMN10H170SVT-7 |
|
Виробник: Diodes Incorporated
MOSFETs 100V N-Ch Enh FET 20Vgss 2.6A 1.2W
MOSFETs 100V N-Ch Enh FET 20Vgss 2.6A 1.2W
на замовлення 42345 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.41 грн |
| 12+ | 28.79 грн |
| 100+ | 17.16 грн |
| 500+ | 14.63 грн |
| 1000+ | 12.87 грн |
| 3000+ | 9.28 грн |
| 6000+ | 9.07 грн |