DMN10H170SVTQ-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 100V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
на замовлення 390000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 14.48 грн |
| 6000+ | 13.37 грн |
| 9000+ | 12.77 грн |
| 15000+ | 11.35 грн |
| 21000+ | 11.22 грн |
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Технічний опис DMN10H170SVTQ-7 Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V.
Інші пропозиції DMN10H170SVTQ-7 за ціною від 13.66 грн до 48.33 грн
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DMN10H170SVTQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 100V 2.6A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V |
на замовлення 390437 шт: термін постачання 21-31 дні (днів) |
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DMN10H170SVTQ-7 | Виробник : Diodes Incorporated |
MOSFETs 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A |
на замовлення 2289 шт: термін постачання 21-30 дні (днів) |
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DMN10H170SVTQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; 1.2W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: 7 inch reel; tape Application: automotive industry Power dissipation: 1.2W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 2.3A On-state resistance: 0.2Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
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DMN10H170SVTQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; 1.2W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: 7 inch reel; tape Application: automotive industry Power dissipation: 1.2W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 2.3A On-state resistance: 0.2Ω Type of transistor: N-MOSFET |
товару немає в наявності |