DMN10H170SVTQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
| Кількість | Ціна |
|---|---|
| 3000+ | 14.03 грн |
| 6000+ | 12.95 грн |
| 9000+ | 12.37 грн |
| 15000+ | 11.00 грн |
| 21000+ | 10.88 грн |
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Технічний опис DMN10H170SVTQ-7 Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V.
Інші пропозиції DMN10H170SVTQ-7 за ціною від 12.73 грн до 45.04 грн
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DMN10H170SVTQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.6A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V |
на замовлення 390437 шт: термін постачання 21-31 дні (днів) |
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DMN10H170SVTQ-7 | Diodes Incorporated |
MOSFETs 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A |
на замовлення 2289 шт: термін постачання 21-30 дні (днів) |
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| DMN10H170SVTQ-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Description: MOSFET N-CH 100V 2.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
на замовлення 390437 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 41.93 грн |
| 10+ | 34.66 грн |
| 100+ | 23.63 грн |
| 500+ | 17.01 грн |
| 1000+ | 15.35 грн |
| DMN10H170SVTQ-7 |
|
Виробник: Diodes Incorporated
MOSFETs 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A
MOSFETs 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A
на замовлення 2289 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.04 грн |
| 10+ | 37.61 грн |
| 100+ | 22.79 грн |
| 500+ | 17.79 грн |
| 1000+ | 15.12 грн |
| 3000+ | 12.73 грн |