Технічний опис DMN10H220LVT-13 Diodes
Description: MOSFET N-CH 100V 1.87A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V, Power Dissipation (Max): 1.67W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V.
Інші пропозиції DMN10H220LVT-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
DMN10H220LVT-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 100V 1.87A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.67W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V |
товару немає в наявності |
|
|
DMN10H220LVT-13 | Виробник : Diodes Incorporated |
MOSFETs 100V N-Ch Enh FET 220mOhm 16Vgs |
товару немає в наявності |

