DMN10H6D2LFDB-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 100V 0.27A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type B)
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Технічний опис DMN10H6D2LFDB-13 Diodes Incorporated
Description: MOSFET 2N-CH 100V 0.27A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V, Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: U-DFN2020-6 (Type B).
Інші пропозиції DMN10H6D2LFDB-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN10H6D2LFDB-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 10K |
товару немає в наявності |