DMN1150UFL3-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 12V 2A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 12V
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис DMN1150UFL3-7 Diodes Incorporated
Description: MOSFET 2N-CH 12V 2A 6DFN, Supplier Device Package: X2-DFN1310-6 (Type B), Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 2A, Drain to Source Voltage (Vdss): 12V, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 390mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції DMN1150UFL3-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DMN1150UFL3-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 12V 2A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1310-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMN1150UFL3-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN1150UFL3-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6 Mounting: SMD Power dissipation: 0.9W Gate charge: 1.4nC Polarisation: unipolar Drain current: 1.6A Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Case: X2-DFN1310-6 On-state resistance: 0.21Ω |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
DMN1150UFL3-7 | Diodes Zetex |
Trans MOSFET N-CH 12V 2A 6-Pin X2-DFN T/R |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| DMN1150UFL3-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 12V 2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 12V 2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMN1150UFL3-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
MOSFETs MOSFET BVDSS: 8V-24V
товару немає в наявності
В кошику
од. на суму грн.
| DMN1150UFL3-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 1.4nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: X2-DFN1310-6
On-state resistance: 0.21Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 1.4nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: X2-DFN1310-6
On-state resistance: 0.21Ω
товару немає в наявності
В кошику
од. на суму грн.
| DMN1150UFL3-7 |
|
Виробник: Diodes Zetex
Trans MOSFET N-CH 12V 2A 6-Pin X2-DFN T/R
Trans MOSFET N-CH 12V 2A 6-Pin X2-DFN T/R
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.