DMN15H310SK3-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 8+ | 44.22 грн |
| 10+ | 37.77 грн |
| 100+ | 22.79 грн |
| 500+ | 19.62 грн |
| 1000+ | 16.67 грн |
| 2500+ | 14.70 грн |
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Технічний опис DMN15H310SK3-13 Diodes Incorporated
Description: MOSFET N-CH 150V 8.3A TO252, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 32W (Ta), Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції DMN15H310SK3-13 за ціною від 23.60 грн до 53.80 грн
| Фото | Назва | Виробник | Інформація |
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DMN15H310SK3-13 | Diodes Incorporated |
 Description: MOSFET N-CH 150V 8.3A TO252Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Qualification: AEC-Q101 Grade: Automotive Power Dissipation (Max): 32W (Ta) Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA |
на замовлення 178 шт: термін постачання 21-31 дні (днів) |
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| DMN15H310SK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 150V 8.3A TO252
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 32W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Description: MOSFET N-CH 150V 8.3A TO252
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 32W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 53.80 грн |
| 10+ | 34.44 грн |
| 100+ | 23.60 грн |