DMN2005LPK-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 440MA 3DFN
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 450mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.99 грн |
| 6000+ | 6.17 грн |
| 9000+ | 5.88 грн |
| 15000+ | 5.22 грн |
| 21000+ | 5.03 грн |
| 30000+ | 4.92 грн |
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Технічний опис DMN2005LPK-7 Diodes Incorporated
Description: MOSFET N-CH 20V 440MA 3DFN, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 1.2V @ 100µA, Power Dissipation (Max): 450mW (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN2005LPK-7 за ціною від 4.66 грн до 40.20 грн
| Фото | Назва | Виробник | Інформація |
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DMN2005LPK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.44A Power dissipation: 0.45W Case: X1-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 3.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1119 шт: термін постачання 14-30 дні (днів) |
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DMN2005LPK-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 440MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V |
на замовлення 45849 шт: термін постачання 21-31 дні (днів) |
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DMN2005LPK-7 | Diodes Incorporated |
MOSFETs 20V 200mA |
на замовлення 5907 шт: термін постачання 21-30 дні (днів) |
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| DMN2005LPK-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.44A
Power dissipation: 0.45W
Case: X1-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.44A
Power dissipation: 0.45W
Case: X1-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1119 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 7.66 грн |
| 73+ | 5.84 грн |
| 100+ | 5.16 грн |
| 500+ | 4.66 грн |
| DMN2005LPK-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 440MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET N-CH 20V 440MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
на замовлення 45849 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.32 грн |
| 19+ | 16.61 грн |
| 100+ | 11.20 грн |
| 500+ | 8.13 грн |
| 1000+ | 7.34 грн |
| DMN2005LPK-7 |
|
Виробник: Diodes Incorporated
MOSFETs 20V 200mA
MOSFETs 20V 200mA
на замовлення 5907 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.20 грн |
| 14+ | 24.42 грн |
| 100+ | 13.57 грн |
| 500+ | 10.13 грн |
| 1000+ | 9.14 грн |
| 3000+ | 7.67 грн |