DMN2005UFGQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 18A PWRDI3333
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.05W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
| Кількість | Ціна |
|---|---|
| 3000+ | 27.88 грн |
| 6000+ | 24.95 грн |
| 9000+ | 24.71 грн |
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Технічний опис DMN2005UFGQ-13 Diodes Incorporated
Description: MOSFET N-CH 20V 18A PWRDI3333, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.05W (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V.
Інші пропозиції DMN2005UFGQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMN2005UFGQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN2005UFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 14A Pulsed drain current: 130A Power dissipation: 2.27W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 164nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN2005UFGQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
MOSFETs MOSFET BVDSS: 8V-24V
товару немає в наявності
В кошику
од. на суму грн.
| DMN2005UFGQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 14A
Pulsed drain current: 130A
Power dissipation: 2.27W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 14A
Pulsed drain current: 130A
Power dissipation: 2.27W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.