DMN2005UFGQ-7 Diodes Incorporated

Description: MOSFET N-CH 20V 18A PWRDI3333, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.05W (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).