Технічний опис DMN2008LFU-13 Diodes Inc
Description: MOSFET 2N-CH 20V 14.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 14.5A, Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V, Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.
Інші пропозиції DMN2008LFU-13
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DMN2008LFU-13 | Виробник : Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 14.5A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
товару немає в наявності |
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DMN2008LFU-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
товару немає в наявності |
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| DMN2008LFU-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.5A; Idm: 75A; 1.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 11.5A Pulsed drain current: 75A Power dissipation: 1.7W Case: U-DFN2030-6 Gate-source voltage: ±12V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 42.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |